Giorgio Pettinari

Giorgio Pettinari, PhD


Institute for Photonics and Nanotechnologies (IFN)

National Research Council of Italy (CNR)

via Cineto Romano 42, 00156 Rome, Italy

Phone: +39 06 41522 254

Fax: +39 06 41522 220


Research ID: M-8678-2014

ORCID: 0000-0003-0187-3770

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Scientific interests:

• Fabrication and study of photonic and plasmonic devices

• Fabrication and study of site-controlled quantum emitters by spatially selected hydrogen incorporation/removal in dilute nitrides

• Fabrication of Kinetic Inductance Detectors (KIDs) for astrophysics and particle physics experiments

• Fundamental properties of highly mismatched alloys (GaAsN and GaAsBi) and III-nitrides (InN and InGaN)

• Hydrogen induced-effects in highly mismatched alloys (defect engineering and nanostructuring), III-nitrides (genesis of solitary cations), transition metal dichalcogenides (TMDs)

• Effects of external perturbations (temperature, pressure, magnetic fields) on the optical properties of semiconductor heterostructures

Short CV:

Dr. Giorgio Pettinari is a staff researcher at the Rome Unit of IFN and he is qualified (2017-2023) as Associate Professor (class 02/B1, Experimental Physics of Condensed Matter). He got a master degree in Physics (Condensed Matter, 2005) and a PhD degree in Materials Science (2008) at Sapienza University of Rome, where he investigated the effect of a small concentration (~1%) of nitrogen or bismuth atoms on the electronic properties of III-V semiconductor alloys, as well as the effects of hydrogen incorporation on such systems and on III-nitrides (i.e., InN and InGaN). Then, he spend two and a half years (2009-11) as Assistant Researcher at the High Field Magnet Laboratory of the Radboud University of Nijmegen (The Netherlands) studying the properties of nanostructured semiconductors at high magnetic fields (up to 30 T). He got a Marie Curie Research Fellowship (PI of the EU project NANOLEDS, PIEF-2010-GA-272612) that he spend (2011-2013) at the University of Nottingham (UK) developing novel strategies for the fabrication of nano-LEDs and movable LEDs. Since 2013, he is at the IFN-Rome, first as Scientific Coordinator of the CNR unit of the Italian FIRB (Future in Research Program) project “DeLIGHTeD” (2013-2017) funded by Italian MIUR (Ministry for Education, University and Research) and then as a permanent staff researcher (since 2018). There, his activity is mainly focused on the fabrication and study of photonics (mainly, emitter-cavity integrated systems) and plasmonic devices. He is also responsible for the fabrication of KID sensors for astrophysics and high-energy physics applications within several projects funded by ASI (Italian Space Agency), INFN (National Institute for Nuclear Physics), MIUR (Ministry for Education, University and Research of Italy), or ERC (European Research Council).

Selected publications:

• D. Tedeschi, E. Blundo, M. Felici, G. Pettinari, B. Liu, T. Yildrim, E. Petroni, C. Zhang, Y. Zhu, S. Sennato, Y. Lu, and A. Polimeni

“Controlled Micro/Nanodome Formation in Proton-Irradiated Bulk Transistion-Metal Dichalcogenides”, Adv. Mater. 1903795 (2019)

• G. Pettinari, L.A. Labbate, M.S. Sharma, S. Rubini, A. Polimeni, and M. Felici

“Plasmon-assisted bandgap engineering in dilute nitrides”, Nanophotonics 8, 1465 (2019)

• F. Biccari, A. Boschetti, G. Pettinari, F. La China, M. Gurioli, F. Intonti, A. Vinattieri, M.S. Sharma, M. Capizzi, A. Gerardino, L. Businaro, M. Hopkinson, A. Polimeni, and M. Felici

Site-controlled single-photon emitters fabricated by near-field illuminations”, Adv. Mater. 30, 1705450 (2018)

• G. Pettinari, M. Felici, F. Biccari, M. Capizzi, and A. Polimeni

Site-Controlled Quantum Emitters in Dilute Nitrides and their Integration in Photonic Crystal Cavities”, Photonics 5, 10 (2018)

• G. Pettinari, A. Gerardino, L. Businaro, A. Polimeni, M. Capizzi, M. Hopkinson, S. Rubini, F. Biccari, F. Intonti, A. Vinattieri, M. Gurioli, and M. Felici

A lithographic approach for quantum dot-photonic crystal nanocavity coupling in dilute nitrides”, Microelectron. Eng. 174, 16 (2017)

• G. Pettinari, F. Filippone, A. Polimeni, G. Mattioli, A. Patanè, V. Lebedev, M. Capizzi, and A. Amore Bonapasta

Genesis of 'Solitary Cations' Induced by Atomic Hydrogen”, Adv. Func. Mater. 25, 5353 (2015)

• G. Pettinari, N. Balakrishnan, O. Makarovsky, R.P. Campion, A. Polimeni, M. Capizzi, and A. Patanè

A micrometer-size movable light emitting area in a resonant tunneling light emitting diode”, App. Phys. Lett. 103, 241105 (2013)

• G. Pettinari, A. Patanè, A. Polimeni, M. Capizzi, X. Lu, and T. Tiedje

Bi-induced p-type conductivity in nominally undoped Ga(AsBi)”, Appl. Phys. Lett. 100, 092109 (2012)

• R. Trotta, A. Polimeni, F. Martelli, G. Pettinari, M. Capizzi, L. Felisari, S. Rubini, M. Francardi, A. Gerardino, P.C.M. Christianen, and J.C. Maan

Fabrication of Site-Controlled Quantum Dots by Spatially Selective Incorporation of Hydrogen in Ga(AsN)/GaAs Heterostructures”, Adv. Mater. 23, 2706 (2011)

• G. Pettinari, A. Polimeni, J.H. Blokland, R. Trotta, P.C.M. Christianen, M. Capizzi, J.C. Maan, X. Lu, E.C. Young, and T. Tiedje

Compositional dependence of the exciton reduced mass in GaAs1-xBix (x = 0-10%)”, Phys. Rev. B 81, 235211 (2010)

• G. Pettinari, A. Polimeni, M. Capizzi, J.H. Blokland, P.C.M. Christianen, J.C. Maan, V. Lebedev, V. Cimalla, and O. Ambacher

Carrier mass measurements in degenerate indium nitride”, Phys. Rev. B 79, 165207 (2009)

• G. Pettinari, F. Masia, M. Capizzi, A. Polimeni, M. Losurdo, G. Bruno, T.H. Kim, S. Choi, A. Brown, V. Lebedev, V. Cimalla, and O. Ambacher

Experimental evidence of different hydrogen donors in n-type InN”, Phys. Rev. B 77, 125207 (2008)

• G. Pettinari, A. Polimeni, F. Masia, R. Trotta, M. Felici, M. Capizzi, T. Niebling, W. Stolz, and P.J. Klar

Electron mass in dilute nitrides and its anomalous dependence on hydrostatic pressure”, Phys. Rev. Lett. 98, 146402 (2007)

• F. Masia, G. Pettinari, A. Polimeni, M. Felici, A. Miriametro, M. Capizzi, A. Lindsay, S.B. Healy, E.P. O’Reilly, A. Cristofoli, G. Bais, M. Piccin, S. Rubini, F. Martelli, A. Franciosi, P.J. Klar, K. Volz, and W. Stolz

Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs1-xNx”, Phys. Rev. B 73, 073201 (2006)