Electron beam lithography 

         Raith-Vistec EBPG 5HR

  • Electron Source FEG (Field Emission Gun)
  • Beam energy: up to 100keV
  • Beam diameter: 8 nm
  • Minimum exposed feature: 20 nm
  • Maximum substrate size: 6 inches
  • 10 MHz frequency
  • Block size 560mm
  • Laser interferometer (l/120 ~5nm)
  • Hight sensor
  • Overlay accuracy <20nm
  • Direct writing (up to 4”)
  • Mask fabrication (up to 4”)






EV-420 double-face contact mask-aligner

  • Contact mask-aligner for optical lithography
  • Double side exposure
  • Lamp power: 350 W
  • Illumination spectrum: no filters
  • Lambda = 365nm




 
Nanoimprint lithography

  • T: 90-200°C;
  • P: 50-130 bar