Electron beam lithography
- Electron Source FEG (Field Emission Gun)
- Beam energy: up to 100keV
- Beam diameter: 8 nm
- Minimum exposed feature: 20 nm
- Maximum substrate size: 6 inches
- 10 MHz frequency
- Block size 560mm
- Laser interferometer (l/120 ~5nm)
- Hight sensor
- Overlay accuracy <20nm
- Direct writing (up to 4”)
- Mask fabrication (up to 4”)
EV-420 double-face contact mask-aligner
- Contact mask-aligner for optical lithography
- Double side exposure
- Lamp power: 350 W
- Illumination spectrum: no filters
- Lambda = 365nm
Nanoimprint lithography
- T: 90-200°C;
- P: 50-130 bar
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