This equipment is a reactive ion etching with an inductively coupled plasma source (ICP). The main difference with a conventional RIE is the separation between the source producing the excited gas (plasma) and the sample bias, realized with a conventional planar diode configuration. The gases used in this system are: CF4, SF6, CHF3, O2, Ar. The source can produce plasma densities much higher (a factor 100) with respect to the conventional configuration and this leads to a higher etching rate. Materials that can be etched in the system are: silicon, silicon oxide, silicon nitride, titanium, niobium.