ICP-RIE
    Wet etching benches (including anisotropic KOH etch)

Plasma Technology - Reactive Ion Etching

 - available gases: CF4, CHF3, SF6, Ar, O2

- pumping system: roots

- rf power: up to 300 W

 The Reactive Ion Etching is a process that can etch various materials in a rarefied atmosphere of an excited gas (plasma). The excitation consists in the production of radicals and ions from a neutral precursor by means of a radiofrequency discharge. The gases used in our system are: CF4, CHF3, SF6, Ar, O2. The electrode configuration is standard, planar, the samples are placed on the cathode. In the system, for particular values of the process parameters (gas flow, gas pressure, discharge power) the etching is anisotropic and maintains the profile of the masking layer. This condition is very important for achieving submicron patterns. Materials that can be etched in the system are: silicon, silicon oxide, silicon nitride, titanium, niobium.














ICP - RIE

 

This equipment is a reactive ion etching with an inductively coupled plasma source (ICP). The main difference with a conventional RIE is the separation between the source producing the excited gas (plasma) and the sample bias, realized with a conventional planar diode configuration. The gases used in this system are: CF4, SF6, CHF3, O2, Ar. The source can produce plasma densities much higher (a factor 100) with respect to the conventional configuration and this leads to a higher etching rate. Materials that can be etched in the system are: silicon, silicon oxide, silicon nitride, titanium, niobium.